A ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors
Authors: Du, LN; Wang, C; Fang, JZ; Wei, B; Xiong, WQ; Wang, XT; Ma, LJ; Wang, XF; Wei, ZM; Xia, CX; Li, JB; Wang, ZC; Zhang, XZ; Liu, Q
Volume: 9 Issue: 25 Pages: 14352-14359 Published: 2019 Language: English Document type: Article
Layered two-dimensional (2D) materials often display unique functionalities for flexible 2D optoelectronic device applications involving natural flexibility and tunable bandgap by bandgap engineering. Composition manipulation by alloying of these 2D materials represents an effective way in fulfilling bandgap engineering, which is particularly true for SnS2xSe2(1-x) alloys showing a continuous bandgap modulation from 2.1 eV for SnS2 to 1.0 eV for SnSe2. Here, we report that a ternary SnS1.26Se0.76 alloy nanosheet can serve as an efficient flexible photodetector, possessing excellent mechanical durability, reproducibility, and high photosensitivity. The photodetectors show a broad spectrum detection ranging from visible to near infrared (NIR) light. These findings demonstrate that the ternary SnS1.26Se0.76 alloy can act as a promising 2D material for flexible and wearable optoelectronic devices.