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High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized beta-Ga2O3 layer

2019-06-06

Authors: Meng, RL; Ji, XL; Lou, Z; Yang, JK; Zhang, YH; Zhang, ZH; Bi, WG; Wang, JX; Wei, TB
OPTICS LETTERS
Volume: 44 Issue: 9 Pages: 2197-2200 Published: MAY 1 2019 Language: English Document type: Article
DOI: 10.1364/OL.44.002197
Abstract:
We report on the high-performance nanoporous (NP) GaN-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a thermal oxidized beta-Ga2O3 insulating layer. The devices show a high responsivity of 4.5 x 10(5) A/W and maximum external quantum efficiency of 1.55 x 10(8)% at 360 nm under a 10 V applied bias, which are attributed to the trap-assisted tunneling induced internal gain mechanism. Correspondingly, a specific detectivity of 8.27 x 10(15) Jones and excellent optical switching repeatability are also observed in our fabricated PDs. The NP-GaN/beta-Ga2O3 MIS UV PD may act as an excellent candidate for the application in UV photodetection due to the high performance and simple fabrication process. (C) 2019 Optical Society of America
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